Part Details for IXTQ16N50P by Littelfuse Inc
Results Overview of IXTQ16N50P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IXTQ16N50P Information
IXTQ16N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTQ16N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1737
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Newark | Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tube |Littelfuse IXTQ16N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.5600 / $3.4200 | Buy Now |
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DISTI #
IXTQ16N50P-ND
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DigiKey | MOSFET N-CH 500V 16A TO3P Min Qty: 1 Lead time: 37 Weeks Container: Tube |
3 In Stock |
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$1.6125 / $4.5500 | Buy Now |
Part Details for IXTQ16N50P
IXTQ16N50P CAD Models
IXTQ16N50P Part Data Attributes
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IXTQ16N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTQ16N50P
Littelfuse Inc
Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ16N50P
This table gives cross-reference parts and alternative options found for IXTQ16N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ16N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTQ16N50P | IXYS Corporation | $1.8067 | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXTQ16N50P vs IXTQ16N50P |
| IXFA16N50P | IXYS Corporation | $2.1817 | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXTQ16N50P vs IXFA16N50P |
| IXTA16N50P | Littelfuse Inc | $3.5918 | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXTQ16N50P vs IXTA16N50P |
| 2N7305 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 17A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IXTQ16N50P vs 2N7305 |
| 2SK3694-01SJ | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 17A I(D), 450V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IXTQ16N50P vs 2SK3694-01SJ |
| FMC16N50ES | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | IXTQ16N50P vs FMC16N50ES |
| 2N7305 | Intersil Corporation | Check for Price | 17A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | IXTQ16N50P vs 2N7305 |
| FML16N50ES | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | IXTQ16N50P vs FML16N50ES |
| 2SK4040-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 17A I(D), 450V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | IXTQ16N50P vs 2SK4040-01 |
| IXTP16N50P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 16A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXTQ16N50P vs IXTP16N50P |