Part Details for IXTP98N075T by IXYS Corporation
Results Overview of IXTP98N075T by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTP98N075T Information
IXTP98N075T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTP98N075T
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 48 |
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$2.7840 / $4.1760 | Buy Now | |
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DISTI #
IXTP98N075T
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TTI | MOSFETs 98 Amps 75V 9.0 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.7100 / $2.0100 | Buy Now |
Part Details for IXTP98N075T
IXTP98N075T CAD Models
IXTP98N075T Part Data Attributes
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IXTP98N075T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP98N075T
IXYS Corporation
Power Field-Effect Transistor, 98A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 98 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTP98N075T Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTP98N075T is -40°C to 150°C.
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To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.
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The recommended gate drive voltage for the IXTP98N075T is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Handle the device by the body, not the leads, and use an anti-static wrist strap or mat to prevent ESD damage. Store the device in an anti-static bag or container when not in use.
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The maximum allowable voltage transient for the IXTP98N075T is 100V, with a maximum duration of 10ms.