Part Details for IXTP7N60PM by IXYS Corporation
Results Overview of IXTP7N60PM by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTP7N60PM Information
IXTP7N60PM by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTP7N60PM
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 600V, 1.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 29 |
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$2.2500 / $4.5000 | Buy Now |
Part Details for IXTP7N60PM
IXTP7N60PM CAD Models
IXTP7N60PM Part Data Attributes
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IXTP7N60PM
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP7N60PM
IXYS Corporation
Power Field-Effect Transistor, 4A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, ISOLATED TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 41 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTP7N60PM
This table gives cross-reference parts and alternative options found for IXTP7N60PM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP7N60PM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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PHX7N60E127 | NXP Semiconductors | Check for Price | TRANSISTOR 3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | IXTP7N60PM vs PHX7N60E127 |