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Part Details for IXTN210P10T by Littelfuse Inc
Results Overview of IXTN210P10T by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTN210P10T Information
IXTN210P10T by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTN210P10T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXTN210P10T-ND
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DigiKey | MOSFET P-CH 100V 210A SOT227B Min Qty: 1 Lead time: 37 Weeks Container: Tube |
27 In Stock |
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$37.3349 / $48.9600 | Buy Now |
|
DISTI #
75578331
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RS | DiscMSFT PChan-Trench Gate SOT-227B(mini Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$49.4400 / $53.7400 | RFQ |
Part Details for IXTN210P10T
IXTN210P10T CAD Models
IXTN210P10T Part Data Attributes
Alternate Parts for IXTN210P10T
This table gives cross-reference parts and alternative options found for IXTN210P10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTN210P10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFN200N10P | IXYS Corporation | $25.2105 | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXTN210P10T vs IXFN200N10P |
| APT10M07JVFR | Microchip Technology Inc | $68.5532 | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXTN210P10T vs APT10M07JVFR |
| APT10M07JVR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | IXTN210P10T vs APT10M07JVR |
| BUK416-100AE | NXP Semiconductors | Check for Price | TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IXTN210P10T vs BUK416-100AE |
| IXFE180N10 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXTN210P10T vs IXFE180N10 |
| APT10M07JVFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | IXTN210P10T vs APT10M07JVFR |
| IXFN200N10P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXTN210P10T vs IXFN200N10P |
| MTE215N10E | Motorola Mobility LLC | Check for Price | 215A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET | IXTN210P10T vs MTE215N10E |
| BUK416-100BE | NXP Semiconductors | Check for Price | TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | IXTN210P10T vs BUK416-100BE |
IXTN210P10T Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTN210P10T is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, IXTN210P10T is rated for operation up to 150°C junction temperature, but it's recommended to derate the current and voltage ratings according to the temperature derating curve in the datasheet.
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To ensure reliability, follow proper handling and storage procedures, use a clean and dry PCB assembly process, and perform thorough testing and inspection according to industry standards such as IPC-A-610.
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Yes, IXTN210P10T can be used in parallel configuration, but it's essential to ensure that the devices are matched in terms of electrical characteristics and thermal performance to avoid uneven current sharing and thermal runaway.
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The recommended gate drive voltage for IXTN210P10T is 10-15V, but it can be operated with a gate drive voltage as low as 6V. However, a higher gate drive voltage may be required for high-frequency switching applications.