Part Details for IXTN210P10T by IXYS Corporation
Results Overview of IXTN210P10T by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTN210P10T Information
IXTN210P10T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTN210P10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71AH4575
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Newark | Mosfet Module, P-Channel, 100V, 210A, Channel Type:P Channel, Continuous Drain Current Id:210A, Drain Source Voltage Vds:100V, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V, Power Dissipation:830W Rohs Compliant: Yes |Ixys Semiconductor IXTN210P10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$36.1000 / $45.2000 | Buy Now |
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DISTI #
747-IXTN210P10T
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Mouser Electronics | MOSFET Modules TrenchP Channel Power MOSFETs RoHS: Compliant | 890 |
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$39.3000 / $50.2400 | Buy Now |
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DISTI #
IXTN210P10T
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TTI | MOSFET Modules TrenchP Channel Power MOSFETs Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$46.3300 / $48.2000 | Buy Now |
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DISTI #
IXTN210P10T
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TME | Module, single transistor, -100V, -210A, SOT227B, screw, Idm: -800A Min Qty: 1 | 0 |
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$41.5500 / $52.3200 | RFQ |
Part Details for IXTN210P10T
IXTN210P10T CAD Models
IXTN210P10T Part Data Attributes
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IXTN210P10T
IXYS Corporation
Buy Now
Datasheet
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IXTN210P10T
IXYS Corporation
Power Field-Effect Transistor, 210A I(D), 100V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 210 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Pulsed Drain Current-Max (IDM) | 800 A | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTN210P10T Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTN210P10T is -55°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or less, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IXTN210P10T is 15V, but it can operate with a gate drive voltage as low as 10V.
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Yes, the IXTN210P10T is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
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The IXTN210P10T can be protected from overvoltage and overcurrent by using a voltage clamp circuit and a current sense resistor, respectively.