Part Details for IXTK5N250 by IXYS Corporation
Results Overview of IXTK5N250 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IXTK5N250 Information
IXTK5N250 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTK5N250
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTK5N250
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TTI | MOSFETs 2500V, 5A, 8.8Ohm Power MOSFET Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$66.5000 | Buy Now |
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New Advantage Corporation | MOSFET DIS.5A 2500V N-CH TO-264 HIGH VOLTAGE RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 38 |
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$129.8700 / $140.7000 | Buy Now |
Part Details for IXTK5N250
IXTK5N250 CAD Models
IXTK5N250 Part Data Attributes
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IXTK5N250
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTK5N250
IXYS Corporation
Power Field-Effect Transistor, 5A I(D), 2500V, 8.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-264AA | |
| Package Description | PLASTIC, TO-264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 2500 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 8.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 960 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTK5N250
This table gives cross-reference parts and alternative options found for IXTK5N250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTK5N250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTX5N250 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 2500V, 8.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXTK5N250 vs IXTX5N250 |
IXTK5N250 Frequently Asked Questions (FAQ)
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The maximum junction temperature that IXTK5N250 can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure reliability in high-temperature applications, it's essential to provide adequate heat sinking, use a thermal interface material, and follow proper mounting and soldering techniques.
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The recommended gate drive voltage for IXTK5N250 is between 10V and 15V. However, the exact voltage depends on the specific application and switching frequency.
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Yes, IXTK5N250 can be used in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize differences in switching times and voltage drops.
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The recommended dead time for IXTK5N250 in a half-bridge configuration is typically around 100-200 ns. However, the exact dead time depends on the specific application, switching frequency, and layout.