-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IXTH48N65X2 by Littelfuse Inc
Results Overview of IXTH48N65X2 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTH48N65X2 Information
IXTH48N65X2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTH48N65X2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IXTH48N65X2-ND
|
DigiKey | MOSFET N-CH 650V 48A TO247 Min Qty: 1 Lead time: 29 Weeks Container: Tube |
514 In Stock |
|
$5.2856 / $10.0400 | Buy Now |
Part Details for IXTH48N65X2
IXTH48N65X2 CAD Models
IXTH48N65X2 Part Data Attributes
|
|
IXTH48N65X2
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTH48N65X2
Littelfuse Inc
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.4 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 660 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTH48N65X2 Frequently Asked Questions (FAQ)
-
The maximum operating junction temperature of the IXTH48N65X2 is 175°C.
-
Yes, the IXTH48N65X2 is designed for high-frequency switching applications up to 100 kHz.
-
The typical turn-on time is 15 ns and the typical turn-off time is 30 ns.
-
Yes, the IXTH48N65X2 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are properly matched and thermally coupled to avoid uneven current sharing.
-
The recommended gate drive voltage for the IXTH48N65X2 is 10-15 V.