Part Details for IXTH20P50P by IXYS Corporation
Results Overview of IXTH20P50P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTH20P50P Information
IXTH20P50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTH20P50P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTH20P50P
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Mouser Electronics | MOSFETs -20.0 Amps -500V 0.450 Rds RoHS: Compliant | 595 |
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$6.9200 / $11.8300 | Buy Now |
DISTI #
87339451
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Verical | Trans MOSFET P-CH 500V 20A 3-Pin(3+Tab) TO-247AD Min Qty: 6 Package Multiple: 1 | Americas - 453 |
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$9.1735 / $10.8179 | Buy Now |
DISTI #
IXTH20P50P
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TTI | MOSFETs -20.0 Amps -500V 0.450 Rds Min Qty: 30 Package Multiple: 30 Container: Tube |
Americas - 300 In Stock |
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$8.8100 / $9.1700 | Buy Now |
DISTI #
IXTH20P50P
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TME | Transistor: P-MOSFET, PolarP™, unipolar, -500V, -20A, 460W, TO247-3 Min Qty: 1 | 461 |
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$7.0000 / $9.8800 | Buy Now |
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New Advantage Corporation | MOSFET DIS.20A 500V P-CH TO-247AD POLARP RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 380 |
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$17.1800 / $18.6100 | Buy Now |
Part Details for IXTH20P50P
IXTH20P50P CAD Models
IXTH20P50P Part Data Attributes
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IXTH20P50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH20P50P
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247 | |
Package Description | TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 460 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTH20P50P
This table gives cross-reference parts and alternative options found for IXTH20P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH20P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IXTT20P50P | Littelfuse Inc | $10.0730 | Power Field-Effect Transistor, | IXTH20P50P vs IXTT20P50P |
IXTT20P50P | IXYS Corporation | $6.9139 | Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXTH20P50P vs IXTT20P50P |
IXTH20P50P | Littelfuse Inc | $8.0757 | Power Field-Effect Transistor, | IXTH20P50P vs IXTH20P50P |
IXTH20P50P Frequently Asked Questions (FAQ)
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The IXTH20P50P is designed for high-frequency switching applications up to 100 kHz, but the maximum operating frequency depends on the specific application and circuit design.
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To ensure thermal stability, it is essential to provide adequate heat sinking, use a thermally conductive interface material, and maintain a maximum junction temperature of 150°C.
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The recommended gate drive voltage for the IXTH20P50P is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IXTH20P50P can be used in a parallel configuration to increase the current handling capability, but it is essential to ensure that the devices are properly matched and the gate drive signals are synchronized.
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To protect the IXTH20P50P from overvoltage and overcurrent, it is recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection using a current sense resistor and a comparator.