Part Details for IXTH180N10T by IXYS Corporation
Results Overview of IXTH180N10T by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXTH180N10T Information
IXTH180N10T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTH180N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTH180N10T
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Mouser Electronics | MOSFETs 180 Amps 100V 6.1 Rds RoHS: Compliant | 609 |
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$3.7500 / $7.3200 | Buy Now |
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DISTI #
IXTH180N10T
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TTI | MOSFETs 180 Amps 100V 6.1 Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$4.9600 / $5.1600 | Buy Now |
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New Advantage Corporation | MOSFET DIS.180A 100V N-CH TO-247AD TRENCHMV RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 136 |
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$10.7000 / $11.5900 | Buy Now |
Part Details for IXTH180N10T
IXTH180N10T CAD Models
IXTH180N10T Part Data Attributes
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IXTH180N10T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTH180N10T
IXYS Corporation
Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 750 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 450 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTH180N10T
This table gives cross-reference parts and alternative options found for IXTH180N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH180N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTA180N10T | IXYS Corporation | $2.8822 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXTH180N10T vs IXTA180N10T |
| IXTP180N10T | IXYS Corporation | $3.5311 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXTH180N10T vs IXTP180N10T |
| IXTQ180N10T | Littelfuse Inc | $4.8972 | Power Field-Effect Transistor, | IXTH180N10T vs IXTQ180N10T |
| IXTH180N10T | Littelfuse Inc | $5.0989 | Power Field-Effect Transistor, | IXTH180N10T vs IXTH180N10T |
| IXTQ180N10T | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXTH180N10T vs IXTQ180N10T |
| IXTP180N10T | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXTH180N10T vs IXTP180N10T |
IXTH180N10T Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTH180N10T is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capabilities at higher temperatures to ensure reliable operation.
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Proper cooling of the IXTH180N10T is crucial to prevent overheating. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate the maximum power dissipation of the device, taking into account the ambient temperature and airflow.
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The recommended gate drive voltage for the IXTH180N10T is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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To protect the IXTH180N10T from overvoltage and overcurrent, use a suitable voltage clamp or surge protector, and consider adding overcurrent protection (OCP) and overtemperature protection (OTP) circuits. Additionally, ensure that the device is operated within its specified maximum ratings and derate its power handling capabilities accordingly.
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For optimal performance and reliability, follow good PCB design practices, such as using a solid ground plane, minimizing lead lengths, and ensuring good thermal conductivity. Place the device close to the heat sink, and use a low-inductance layout to minimize voltage spikes and ringing.