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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTH140P10T by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTH140P10T-ND
|
DigiKey | MOSFET P-CH 100V 140A TO247 Min Qty: 1 Lead time: 37 Weeks Container: Tube |
289 In Stock |
|
$10.6643 / $18.6100 | Buy Now |
DISTI #
75578322
|
RS | DiscMSFT PChan-Trench Gate TO-247AD Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$15.1700 / $16.4900 | RFQ |
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IXTH140P10T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTH140P10T
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 140 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 700 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 568 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTH140P10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH140P10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTT140P10T | Littelfuse Inc | $11.7964 | Power Field-Effect Transistor, | IXTH140P10T vs IXTT140P10T |
IXTH140P10T | IXYS Corporation | $13.3173 | Power Field-Effect Transistor, 140A I(D), 100V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXTH140P10T vs IXTH140P10T |
IXTT140P10T | IXYS Corporation | $8.7767 | Power Field-Effect Transistor, 140A I(D), 100V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXTH140P10T vs IXTT140P10T |
The recommended PCB footprint for the IXTH140P10T is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
While the IXTH140P10T is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and design considerations. However, it's essential to consult with Littelfuse's application engineers for specific guidance.
To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its specified operating temperature range (up to 150°C).
Yes, the IXTH140P10T can be paralleled to achieve higher current ratings. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
The IXTH140P10T should be stored in a dry, cool place, away from direct sunlight and moisture. It's recommended to handle the devices by the body, rather than the leads, to prevent damage and electrostatic discharge (ESD).