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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTH10P60 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IXTH10P60-ND
|
DigiKey | MOSFET P-CH 600V 10A TO247 Min Qty: 1 Lead time: 37 Weeks Container: Tube |
82 In Stock |
|
$7.0585 / $12.9600 | Buy Now |
DISTI #
88137166
|
Verical | Trans MOSFET P-CH Si 600V 10A 3-Pin(3+Tab) TO-247AD Min Qty: 7 Package Multiple: 1 Date Code: 2401 | Americas - 300 |
|
$10.6134 / $11.4170 | Buy Now |
DISTI #
87772541
|
Verical | Trans MOSFET P-CH Si 600V 10A 3-Pin(3+Tab) TO-247AD Min Qty: 5 Package Multiple: 1 Date Code: 2439 | Americas - 300 |
|
$7.5600 / $11.8000 | Buy Now |
DISTI #
83671282
|
Verical | Trans MOSFET P-CH Si 600V 10A 3-Pin(3+Tab) TO-247AD Min Qty: 7 Package Multiple: 1 Date Code: 2401 | Americas - 200 |
|
$11.1213 / $12.5924 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 1OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 | 400 |
|
$12.2130 / $18.3195 | Buy Now |
DISTI #
IXTH10P60
|
Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 300 |
|
$6.1200 / $11.8000 | Buy Now |
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IXTH10P60
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTH10P60
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 157 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTH10P60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH10P60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTT10P60 | Littelfuse Inc | $10.0781 | Power Field-Effect Transistor, | IXTH10P60 vs IXTT10P60 |
IXTT10P60 | IXYS Corporation | $5.5078 | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXTH10P60 vs IXTT10P60 |
IXTH10P60 | IXYS Corporation | $9.0642 | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXTH10P60 vs IXTH10P60 |
The maximum operating temperature range for the IXTH10P60 is -40°C to 150°C.
To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder to the leads. Avoid applying excessive heat or pressure, which can damage the device.
Store the IXTH10P60 in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the device to temperatures above 30°C or humidity above 60%.
Yes, the IXTH10P60 is suitable for high-reliability applications, such as aerospace, automotive, and industrial control systems, due to its high-quality construction and rigorous testing.
Handle the IXTH10P60 with ESD-protective materials, such as wrist straps, mats, or bags. Avoid touching the device's leads or pins, and use a grounded workstation or mat to prevent static buildup.