Part Details for IXTA6N50D2 by IXYS Corporation
Results Overview of IXTA6N50D2 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXTA6N50D2 Information
IXTA6N50D2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA6N50D2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA6N50D2
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Mouser Electronics | MOSFETs N-CH MOSFETS (D2) 500V 6A RoHS: Compliant | 0 |
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$5.3800 / $10.4400 | Order Now |
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DISTI #
IXTA6N50D2
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TTI | MOSFETs N-CH MOSFETS (D2) 500V 6A Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$6.4900 / $6.6200 | Buy Now |
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DISTI #
IXTA6N50D2
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TME | Transistor: N-MOSFET, unipolar, 500V, 6A, 300W, TO263, 64ns Min Qty: 1 | 226 |
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$5.6200 / $8.3900 | Buy Now |
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DISTI #
IXTA6N50D2
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IBS Electronics | TRANS MOSFET N-CH 500V 3-PIN(2+, TAB) D2PAK Min Qty: 300 Package Multiple: 1 | 0 |
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$7.2800 / $7.4360 | Buy Now |
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Vyrian | Transistors | 1036 |
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RFQ |
Part Details for IXTA6N50D2
IXTA6N50D2 CAD Models
IXTA6N50D2 Part Data Attributes
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IXTA6N50D2
IXYS Corporation
Buy Now
Datasheet
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IXTA6N50D2
IXYS Corporation
Power Field-Effect Transistor, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
IXTA6N50D2 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the IXTA6N50D2 is typically up to 100 kHz, but it can be used at higher frequencies with proper design and layout considerations.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
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The recommended gate drive voltage for the IXTA6N50D2 is between 10V and 15V, with a maximum gate-source voltage of 20V.
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Yes, the IXTA6N50D2 can be used in a parallel configuration, but it's essential to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
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The maximum allowed voltage imbalance between the drain and source terminals is ±10V to prevent damage to the internal body diode.