Part Details for IXTA4N65X2 by IXYS Corporation
Results Overview of IXTA4N65X2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXTA4N65X2 Information
IXTA4N65X2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA4N65X2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
02AC9830
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Newark | Mosfet, N-Ch, 650V, 4A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:4A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.85Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipation Rohs Compliant: Yes |Ixys Semiconductor IXTA4N65X2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.7000 | Buy Now |
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DISTI #
747-IXTA4N65X2
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Mouser Electronics | MOSFETs TO263 650V 4A N-CH X2CLASS RoHS: Compliant | 174 |
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$1.2200 / $3.0900 | Buy Now |
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Bristol Electronics | 250 |
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RFQ | ||
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Quest Components | 200 |
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$1.3920 / $2.7840 | Buy Now | |
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DISTI #
IXTA4N65X2
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TTI | MOSFETs TO263 650V 4A N-CH X2CLASS Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.6400 / $1.8600 | Buy Now |
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DISTI #
IXTA4N65X2
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TME | Transistor: N-MOSFET, X2-Class, unipolar, 650V, 4A, 80W, TO263 Min Qty: 1 | 12 |
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$1.2900 / $2.5400 | Buy Now |
Part Details for IXTA4N65X2
IXTA4N65X2 CAD Models
IXTA4N65X2 Part Data Attributes
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IXTA4N65X2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA4N65X2
IXYS Corporation
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Finish | Matte Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
IXTA4N65X2 Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance would involve placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components to allow for good airflow.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, use a suitable heat sink, and ensure good thermal interface material (TIM) between the device and heat sink.
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Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure the device operates within the recommended temperature range.
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To protect the device from EOS and ESD, use proper handling and storage procedures, implement ESD protection circuits, and ensure the device is properly soldered and connected to the PCB.
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The recommended gate drive circuitry involves using a suitable gate driver IC, ensuring a low-impedance gate drive path, and optimizing the gate resistance and capacitance for the specific application.