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Part Details for IXTA4N150HV by Littelfuse Inc
Results Overview of IXTA4N150HV by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IXTA4N150HV Information
IXTA4N150HV by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA4N150HV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1377
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Newark | Discmosfet N-Ch Std-Hivoltage To-263D2/ Tube |Littelfuse IXTA4N150HV RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.2100 | Buy Now |
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DISTI #
IXTA4N150HV-ND
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DigiKey | MOSFET N-CH 1500V 4A TO263 Min Qty: 1 Lead time: 50 Weeks Container: Tube | Temporarily Out of Stock |
|
$6.8750 / $13.6000 | Buy Now |
Part Details for IXTA4N150HV
IXTA4N150HV CAD Models
IXTA4N150HV Part Data Attributes
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IXTA4N150HV
Littelfuse Inc
Buy Now
Datasheet
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IXTA4N150HV
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1500 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 35 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTA4N150HV Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTA4N150HV is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 6.5mm x 6.5mm.
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Yes, IXTA4N150HV is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below 150°C.
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Yes, you can parallel multiple IXTA4N150HV devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
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The recommended gate drive voltage for IXTA4N150HV is between 10V and 15V, with a minimum rise and fall time of 10ns to ensure reliable switching and minimize electromagnetic interference (EMI).