Part Details for IXTA3N120 by IXYS Corporation
Results Overview of IXTA3N120 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTA3N120 Information
IXTA3N120 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA3N120
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71AH4567
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Newark | Mosfet, N-Ch, 1.2Kv, 3A, To-263Aa Rohs Compliant: Yes |Ixys Semiconductor IXTA3N120 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1871 |
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$5.4300 / $8.6100 | Buy Now |
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DISTI #
747-IXTA3N120
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Mouser Electronics | MOSFETs 3 Amps 1200V 4.5 Rds RoHS: Compliant | 2976 |
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$4.6100 / $8.9300 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 4.5 Ohm 200 W Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$4.2600 / $4.6200 | Buy Now |
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DISTI #
IXTA3N120
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TTI | MOSFETs 3 Amps 1200V 4.5 Rds Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
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$5.6300 | Buy Now |
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Chip 1 Exchange | INSTOCK | 10 |
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RFQ | |
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Vyrian | Transistors | 427 |
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RFQ |
Part Details for IXTA3N120
IXTA3N120 CAD Models
IXTA3N120 Part Data Attributes
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IXTA3N120
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA3N120
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTA3N120
This table gives cross-reference parts and alternative options found for IXTA3N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA3N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTA3N110 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 3A I(D), 1100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXTA3N120 vs IXTA3N110 |
| IXTA3N120 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXTA3N120 vs IXTA3N120 |
| IXTA3N110 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 1100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXTA3N120 vs IXTA3N110 |
IXTA3N120 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTA3N120 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or less, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IXTA3N120 is 10-15V, with a maximum gate-source voltage of 20V.
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Yes, the IXTA3N120 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for high-frequency operation.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.