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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTA10P50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IXTA10P50P-ND
|
DigiKey | MOSFET P-CH 500V 10A TO263 Min Qty: 1 Lead time: 38 Weeks Container: Tube |
2075 In Stock |
|
$3.4431 / $4.9000 | Buy Now |
DISTI #
V36:1790_07432277
|
Arrow Electronics | Trans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 37 Weeks Date Code: 2340 | Americas - 1036 |
|
$3.3610 / $4.2190 | Buy Now |
DISTI #
76062217
|
Verical | Trans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK Min Qty: 2 Package Multiple: 1 Date Code: 2340 | Americas - 1036 |
|
$3.3610 / $4.2190 | Buy Now |
DISTI #
69744162
|
Verical | Trans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK Min Qty: 13 Package Multiple: 1 Date Code: 2301 | Americas - 289 |
|
$5.4145 / $6.2787 | Buy Now |
|
Quest Components | 231 |
|
$6.4152 / $11.6640 | Buy Now |
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IXTA10P50P
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTA10P50P
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 42 pF | |
JEDEC-95 Code | TO-263AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTA10P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA10P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTH10P50P | IXYS Corporation | $5.0006 | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXTA10P50P vs IXTH10P50P |
The recommended footprint and land pattern for the IXTA10P50P can be found in the Littelfuse application note AN9313, which provides guidelines for surface mount assembly of thyristor devices.
To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Littelfuse application note AN9313. Additionally, use a solder with a melting point below 250°C to prevent damage to the device.
The IXTA10P50P has a high power dissipation capability, so proper thermal management is crucial. Ensure good heat sinking, use a thermal interface material, and follow the thermal design guidelines outlined in the datasheet to prevent overheating.
While the IXTA10P50P is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Littelfuse or a qualified representative to determine if the device meets the necessary standards and certifications for such applications.
To protect the IXTA10P50P from EOS and ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement circuit protection devices such as TVS diodes or zener diodes to prevent voltage transients.