Part Details for IXTA08N100D2HV by IXYS Corporation
Results Overview of IXTA08N100D2HV by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXTA08N100D2HV Information
IXTA08N100D2HV by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTA08N100D2HV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA08N100D2HV
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Mouser Electronics | MOSFETs TO263 1KV .8A N-CH HIVOLT RoHS: Compliant | 0 |
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$2.6800 / $5.3600 | Order Now |
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DISTI #
IXTA08N100D2HV
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TTI | MOSFETs TO263 1KV .8A N-CH HIVOLT Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.6800 / $2.7900 | Buy Now |
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DISTI #
IXTA08N100D2HV
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TME | Transistor: N-MOSFET, unipolar, 1kV, 0.8A, 60W, TO263HV Min Qty: 1 | 0 |
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$1.8800 / $3.2500 | RFQ |
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Vyrian | Transistors | 149 |
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RFQ |
Part Details for IXTA08N100D2HV
IXTA08N100D2HV CAD Models
IXTA08N100D2HV Part Data Attributes
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IXTA08N100D2HV
IXYS Corporation
Buy Now
Datasheet
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IXTA08N100D2HV
IXYS Corporation
Power Field-Effect Transistor, 21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263HV, 2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | TO-263HV, 2 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Drain-source On Resistance-Max | 21 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTA08N100D2HV Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXTA08N100D2HV is -40°C to 150°C.
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Yes, the IXTA08N100D2HV is designed for high-frequency switching applications up to 100 kHz.
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The typical turn-on time is 20 ns and the typical turn-off time is 30 ns.
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Yes, the IXTA08N100D2HV can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and synchronized to avoid uneven current sharing.
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The recommended gate drive voltage for the IXTA08N100D2HV is 15 V, but it can operate with a gate drive voltage as low as 10 V.