Part Details for IXSX80N60B by IXYS Corporation
Results Overview of IXSX80N60B by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXSX80N60B Information
IXSX80N60B by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IXSX80N60B
IXSX80N60B CAD Models
IXSX80N60B Part Data Attributes
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IXSX80N60B
IXYS Corporation
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Datasheet
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IXSX80N60B
IXYS Corporation
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SATURATION VOLTAGE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 160 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 450 ns | |
| Turn-on Time-Nom (ton) | 120 ns |
Alternate Parts for IXSX80N60B
This table gives cross-reference parts and alternative options found for IXSX80N60B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXSX80N60B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IXDN75N120 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 | IXSX80N60B vs IXDN75N120 |
| APT50GF120B2RG | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 156A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN | IXSX80N60B vs APT50GF120B2RG |
| APT60GT60BRG | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 | IXSX80N60B vs APT60GT60BRG |
| APT60GT60BR | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXSX80N60B vs APT60GT60BR |
| APT60GT60BRG | Microchip Technology Inc | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 | IXSX80N60B vs APT60GT60BRG |
| IXGR50N60B | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | IXSX80N60B vs IXGR50N60B |
IXSX80N60B Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXSX80N60B is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
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To ensure proper cooling, it's recommended to attach a heat sink to the device, following the manufacturer's guidelines. The heat sink should be designed to dissipate the maximum power dissipation of 250W. Additionally, ensure good airflow around the device and heat sink.
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The recommended gate drive voltage for the IXSX80N60B is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as they may vary depending on the application and switching frequency.
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Yes, the IXSX80N60B can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage.
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The maximum allowable voltage transient for the IXSX80N60B is 80V, as specified in the datasheet. Exceeding this limit may cause damage to the device or affect its reliability.