Part Details for IXLF19N250A by IXYS Corporation
Results Overview of IXLF19N250A by IXYS Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Aerospace and Defense
Telecommunications
Communication and Networking
IXLF19N250A Information
IXLF19N250A by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXLF19N250A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71AH4563
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Newark | Igbt, Single, 2.5Kv, 32A, Isoplus I4-Pac, Continuous Collector Current:32A, Collector Emitter Saturation Voltage:3.2V, Power Dissipation:250W, Collector Emitter Voltage Max:2.5Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Ixys Semiconductor IXLF19N250A RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$35.2300 / $44.8200 | Buy Now |
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DISTI #
IXLF19N250A-ND
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DigiKey | IGBT NPT 2500V 32A ISOPLUS I4PAC Min Qty: 1 Lead time: 34 Weeks Container: Tube | Limited Supply - Call |
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$35.2304 / $49.5100 | Buy Now |
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DISTI #
747-IXLF19N250A
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Mouser Electronics | IGBTs High Voltage IGBT 2500V, 19A RoHS: Compliant | 0 |
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$43.0800 / $50.9400 | Order Now |
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DISTI #
IXLF19N250A
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TTI | IGBTs High Voltage IGBT 2500V, 19A Min Qty: 25 Package Multiple: 25 Container: Tube |
Americas - 150 In Stock |
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$46.9700 | Buy Now |
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DISTI #
IXLF19N250A
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TME | Transistor: IGBT, NPT, 2.5kV, 19A, 250W, ISOPLUS i4-pac™ x024c Min Qty: 1 | 10 |
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$41.8600 / $58.6800 | Buy Now |
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ComSIT USA | 2500V VERY HIGH VOLTAGE (VHV) IGBT Insulated Gate Bipolar Transistor, 19A I(C), 2500V V(BR)CES, N-Channel ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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DISTI #
IXLF19N250A
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IBS Electronics | TRANS IGBT 2.5KV 32A ISOPLUS I4-PAC ROHS COMPLIANT: YES |IXYS SEMICONDUCTOR IXLF19N250A Min Qty: 25 Package Multiple: 1 | 0 |
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$49.8810 / $50.7000 | Buy Now |
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Vyrian | Transistors | 238 |
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RFQ |
Part Details for IXLF19N250A
IXLF19N250A CAD Models
IXLF19N250A Part Data Attributes
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IXLF19N250A
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXLF19N250A
IXYS Corporation
Insulated Gate Bipolar Transistor, 19A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS I4-PAC-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | ISOPLUS | |
| Package Description | I4-PAC-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | ISOPLUS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 19 A | |
| Collector-Emitter Voltage-Max | 2500 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 850 ns | |
| Turn-on Time-Nom (ton) | 150 ns |
IXLF19N250A Frequently Asked Questions (FAQ)
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The recommended gate resistor value for IXLF19N250A is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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To ensure reliable operation of IXLF19N250A in high-temperature environments, it is recommended to derate the device's power handling capability, use a heat sink, and ensure good thermal conductivity between the device and the heat sink.
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The maximum allowable voltage transient for IXLF19N250A is typically 1.5 times the maximum rated voltage, but it's recommended to consult the manufacturer's application notes for specific guidance.
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Yes, IXLF19N250A can be used in parallel to increase current handling capability, but it's essential to ensure that the devices are properly matched and that the gate drive circuits are designed to handle the increased current.
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The recommended dead time for IXLF19N250A in a half-bridge configuration is typically between 100 ns to 500 ns, depending on the specific application and switching frequency.