Part Details for IXKC25N80C by IXYS Corporation
Results Overview of IXKC25N80C by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
IXKC25N80C Information
IXKC25N80C by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXKC25N80C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXKC25N80C
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TME | Transistor: N-MOSFET, unipolar, 800V, 25A, ISOPLUS220™, 550ns Min Qty: 1 | 0 |
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$8.6200 / $12.1100 | RFQ |
Part Details for IXKC25N80C
IXKC25N80C CAD Models
IXKC25N80C Part Data Attributes
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IXKC25N80C
IXYS Corporation
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Datasheet
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IXKC25N80C
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ISOPLUS220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXKC25N80C
This table gives cross-reference parts and alternative options found for IXKC25N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXKC25N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXKC25N80C | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 20A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ISOPLUS220, 3 PIN | IXKC25N80C vs IXKC25N80C |
IXKC25N80C Frequently Asked Questions (FAQ)
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The recommended gate resistor value for the IXKC25N80C is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the IXYS application note AN-1005 for more detailed guidance on gate resistor selection.
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To ensure safe operation during overcurrent conditions, it's essential to implement overcurrent protection (OCP) and desaturation detection. The IXKC25N80C has a built-in desaturation detection feature, which can be used to detect overcurrent conditions. Additionally, an external OCP circuit can be implemented using a sense resistor and a comparator to detect excessive current levels.
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The maximum allowed junction temperature for the IXKC25N80C is 150°C. It's essential to ensure that the IGBT does not exceed this temperature to prevent damage and ensure reliable operation.
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Yes, the IXKC25N80C can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the IGBTs are matched in terms of their electrical characteristics, and that the gate drive and control circuits are designed to handle the parallel configuration. Additionally, it's recommended to consult the IXYS application note AN-1003 for more detailed guidance on paralleling IGBTs.
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The recommended storage temperature range for the IXKC25N80C is -40°C to 125°C. It's essential to store the IGBT within this temperature range to prevent damage and ensure reliable operation.