Datasheets
IXGT24N60C by:

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

Part Details for IXGT24N60C by IXYS Corporation

Results Overview of IXGT24N60C by IXYS Corporation

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IXGT24N60C Information

IXGT24N60C by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXGT24N60C

Part # Distributor Description Stock Price Buy
DISTI # 747-IXGT24N60C
Mouser Electronics IGBTs 48 Amps 600V 2.3 Rds 0
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Part Details for IXGT24N60C

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IXGT24N60C Part Data Attributes

IXGT24N60C IXYS Corporation
Buy Now Datasheet
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IXGT24N60C IXYS Corporation Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-268AA
Package Description D3PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 48 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 130 ns
Turn-on Time-Nom (ton) 15 ns

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