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Part Details for IXGH50N90B2D1 by Littelfuse Inc
Results Overview of IXGH50N90B2D1 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXGH50N90B2D1 Information
IXGH50N90B2D1 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXGH50N90B2D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK0448
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Newark | Igbt, Single, 900V, 75A, To-247, Continuous Collector Current:75A, Collector Emitter Saturation Voltage:2.2V, Power Dissipation:400W, Collector Emitter Voltage Max:900V, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXGH50N90B2D1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 236 |
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$9.5600 / $17.1700 | Buy Now |
Part Details for IXGH50N90B2D1
IXGH50N90B2D1 CAD Models
IXGH50N90B2D1 Part Data Attributes
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IXGH50N90B2D1
Littelfuse Inc
Buy Now
Datasheet
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IXGH50N90B2D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 900 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 820 ns | |
| Turn-on Time-Nom (ton) | 48 ns | |
| VCEsat-Max | 2.7 V |
IXGH50N90B2D1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXGH50N90B2D1 is a 5-pin TO-247 package with a minimum pad size of 3.5mm x 2.5mm and a maximum pad size of 5.5mm x 4.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
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While the IXGH50N90B2D1 is a high-power IGBT, it's not optimized for high-frequency switching applications. The device has a relatively high switching loss, which can lead to increased power dissipation and reduced efficiency at high frequencies. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET.
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To ensure proper cooling, it's essential to provide a sufficient heat sink with a low thermal resistance. The heat sink should be designed to handle the maximum power dissipation of the IGBT, and the thermal interface material should be applied between the device and the heat sink. Additionally, ensure good airflow around the heat sink to prevent hot spots.
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The recommended gate drive voltage for the IXGH50N90B2D1 is between 10V and 20V. A higher gate drive voltage can reduce the turn-on time and increase the device's switching speed, but it also increases the gate drive power consumption. A lower gate drive voltage can reduce power consumption but may increase the turn-on time.
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Yes, the IXGH50N90B2D1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management system should be designed to handle the increased power dissipation.