Part Details for IXGH28N60B3D1 by Littelfuse Inc
Results Overview of IXGH28N60B3D1 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXGH28N60B3D1 Information
IXGH28N60B3D1 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXGH28N60B3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1076
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Newark | Disc Igbt Pt-Mid Frequency To-247Ad/ Tube |Littelfuse IXGH28N60B3D1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.9500 / $4.2500 | Buy Now |
Part Details for IXGH28N60B3D1
IXGH28N60B3D1 CAD Models
IXGH28N60B3D1 Part Data Attributes
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IXGH28N60B3D1
Littelfuse Inc
Buy Now
Datasheet
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IXGH28N60B3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 66 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 160 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 360 ns | |
| Turn-off Time-Nom (toff) | 225 ns | |
| Turn-on Time-Nom (ton) | 43 ns | |
| VCEsat-Max | 1.8 V |
Alternate Parts for IXGH28N60B3D1
This table gives cross-reference parts and alternative options found for IXGH28N60B3D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH28N60B3D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGBC30FD2 | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXGH28N60B3D1 vs IRGBC30FD2 |
| GT15H101 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | IXGH28N60B3D1 vs GT15H101 |
| HGTP1N120CN | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | IXGH28N60B3D1 vs HGTP1N120CN |
| IXGH25N100U1 | Littelfuse Inc | Check for Price | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXGH28N60B3D1 vs IXGH25N100U1 |
| APT30GP60SG | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN | IXGH28N60B3D1 vs APT30GP60SG |
| MGP14N60E | onsemi | Check for Price | 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN | IXGH28N60B3D1 vs MGP14N60E |
| SGB15N60HS | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 | IXGH28N60B3D1 vs SGB15N60HS |
| GT25Q101 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | IXGH28N60B3D1 vs GT25Q101 |
| HGTP20N60C3R | Harris Semiconductor | Check for Price | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | IXGH28N60B3D1 vs HGTP20N60C3R |
| SGP5N60RUFD | Samsung Semiconductor | Check for Price | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | IXGH28N60B3D1 vs SGP5N60RUFD |