Part Details for IXGA20N120A3 by Littelfuse Inc
Results Overview of IXGA20N120A3 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXGA20N120A3 Information
IXGA20N120A3 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXGA20N120A3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1039
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Newark | Disc Igbt Pt-Low Frequency To-263D2/ Tube |Littelfuse IXGA20N120A3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.9200 / $5.2500 | Buy Now |
Part Details for IXGA20N120A3
IXGA20N120A3 CAD Models
IXGA20N120A3 Part Data Attributes
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IXGA20N120A3
Littelfuse Inc
Buy Now
Datasheet
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IXGA20N120A3
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1530 ns | |
Turn-on Time-Nom (ton) | 66 ns | |
VCEsat-Max | 2.5 V |
IXGA20N120A3 Frequently Asked Questions (FAQ)
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The recommended gate resistor value for the IXGA20N120A3 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Littelfuse support for more specific guidance.
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Yes, the IXGA20N120A3 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the thermal management is adequate to handle the increased power dissipation. Additionally, the user should carefully evaluate the dynamic and static current sharing between the parallel devices.
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The maximum allowed case temperature for the IXGA20N120A3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliable operation and to prevent thermal runaway.
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The IXGA20N120A3 is designed for high-frequency switching applications, with a maximum switching frequency of up to 100 kHz. However, the user should carefully evaluate the device's switching losses, thermal management, and EMI considerations when operating at high frequencies.
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Yes, the IXGA20N120A3 can be used in a bridge configuration, such as in a three-phase inverter or a DC-DC converter. However, the user should ensure that the device is properly configured and that the gate drive signals are correctly synchronized to prevent shoot-through currents and other potential issues.