Datasheets
IXGA20N120A3 by:

Insulated Gate Bipolar Transistor,

Part Details for IXGA20N120A3 by Littelfuse Inc

Results Overview of IXGA20N120A3 by Littelfuse Inc

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Applications Industrial Automation Energy and Power Systems Renewable Energy

IXGA20N120A3 Information

IXGA20N120A3 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXGA20N120A3

Part # Distributor Description Stock Price Buy
DISTI # 03AH1039
Newark Disc Igbt Pt-Low Frequency To-263D2/ Tube |Littelfuse IXGA20N120A3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $5.2500
  • 500 $4.7800
  • 1,000 $4.2200
  • 2,500 $3.9200
$3.9200 / $5.2500 Buy Now

Part Details for IXGA20N120A3

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IXGA20N120A3 Part Data Attributes

IXGA20N120A3 Littelfuse Inc
Buy Now Datasheet
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IXGA20N120A3 Littelfuse Inc Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1530 ns
Turn-on Time-Nom (ton) 66 ns
VCEsat-Max 2.5 V

IXGA20N120A3 Related Parts

IXGA20N120A3 Frequently Asked Questions (FAQ)

  • The recommended gate resistor value for the IXGA20N120A3 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Littelfuse support for more specific guidance.

  • Yes, the IXGA20N120A3 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the thermal management is adequate to handle the increased power dissipation. Additionally, the user should carefully evaluate the dynamic and static current sharing between the parallel devices.

  • The maximum allowed case temperature for the IXGA20N120A3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliable operation and to prevent thermal runaway.

  • The IXGA20N120A3 is designed for high-frequency switching applications, with a maximum switching frequency of up to 100 kHz. However, the user should carefully evaluate the device's switching losses, thermal management, and EMI considerations when operating at high frequencies.

  • Yes, the IXGA20N120A3 can be used in a bridge configuration, such as in a three-phase inverter or a DC-DC converter. However, the user should ensure that the device is properly configured and that the gate drive signals are correctly synchronized to prevent shoot-through currents and other potential issues.

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