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Part Details for IXFX80N50P by Littelfuse Inc
Results Overview of IXFX80N50P by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFX80N50P Information
IXFX80N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFX80N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1024
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Newark | Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX80N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$14.8100 / $15.9400 | Buy Now |
Part Details for IXFX80N50P
IXFX80N50P CAD Models
IXFX80N50P Part Data Attributes
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IXFX80N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFX80N50P
Littelfuse Inc
Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFX80N50P
This table gives cross-reference parts and alternative options found for IXFX80N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX80N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX80N50P | IXYS Corporation | $10.7041 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXFX80N50P vs IXFX80N50P |
| IXFK80N50P | IXYS Corporation | $14.3578 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFX80N50P vs IXFK80N50P |
| APT84F50B2 | Microchip Technology Inc | $21.8349 | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IXFX80N50P vs APT84F50B2 |
| IXFK80N50Q3 | IXYS Corporation | $24.2156 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFX80N50P vs IXFK80N50Q3 |
| APT84M50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, 3 PIN | IXFX80N50P vs APT84M50L |
| APT81H50B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3 | IXFX80N50P vs APT81H50B2 |
| APT81H50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3 | IXFX80N50P vs APT81H50L |
| APT84F50B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX-3 | IXFX80N50P vs APT84F50B2 |
| IXFK80N50Q3 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFX80N50P vs IXFK80N50Q3 |
| APT84F50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN | IXFX80N50P vs APT84F50L |
IXFX80N50P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFX80N50P is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, the IXFX80N50P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
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The maximum allowed case temperature for the IXFX80N50P is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
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Yes, you can parallel multiple IXFX80N50P devices to increase the current rating, but it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal differences between devices.