Part Details for IXFX80N50P by IXYS Corporation
Results Overview of IXFX80N50P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFX80N50P Information
IXFX80N50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFX80N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFX80N50P-ND
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DigiKey | MOSFET N-CH 500V 80A PLUS247-3 Min Qty: 1 Lead time: 37 Weeks Container: Tube | Temporarily Out of Stock |
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$16.7677 / $22.4600 | Buy Now |
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DISTI #
747-IXFX80N50P
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Mouser Electronics | MOSFETs 500V 80A RoHS: Compliant | 25 |
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$17.1200 / $22.0300 | Buy Now |
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DISTI #
IXFX80N50P
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TTI | MOSFETs 500V 80A Min Qty: 30 Package Multiple: 30 Container: Tube |
Americas - 300 In Stock |
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$18.8300 / $19.2100 | Buy Now |
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DISTI #
IXFX80N50P
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TME | Transistor: N-MOSFET, unipolar, 500V, 80A, 1040W, PLUS247™ Min Qty: 1 | 0 |
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$16.8200 / $23.4900 | RFQ |
Part Details for IXFX80N50P
IXFX80N50P CAD Models
IXFX80N50P Part Data Attributes
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IXFX80N50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX80N50P
IXYS Corporation
Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFX80N50P
This table gives cross-reference parts and alternative options found for IXFX80N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX80N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFK80N50P | IXYS Corporation | $14.3578 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFX80N50P vs IXFK80N50P |
| APT84M50B2 | Microchip Technology Inc | $17.2352 | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFX80N50P vs APT84M50B2 |
| APT84F50B2 | Microchip Technology Inc | $21.8349 | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IXFX80N50P vs APT84F50B2 |
| IXFK80N50Q3 | IXYS Corporation | $24.2156 | Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFX80N50P vs IXFK80N50Q3 |
| APT84M50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, 3 PIN | IXFX80N50P vs APT84M50L |
| APT81H50B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, ROHS COMPLIANT PACKAGE-3 | IXFX80N50P vs APT81H50B2 |
| APT81H50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 81A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT PACKAGE-3 | IXFX80N50P vs APT81H50L |
| APT84F50B2 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX-3 | IXFX80N50P vs APT84F50B2 |
| IXFK80N50Q3 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFX80N50P vs IXFK80N50Q3 |
| APT84F50L | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN | IXFX80N50P vs APT84F50L |
IXFX80N50P Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IXFX80N50P is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
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The recommended gate drive voltage for the IXFX80N50P is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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Yes, the IXFX80N50P is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
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To protect the IXFX80N50P from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and interrupt overcurrent conditions.