Datasheets
IXFX64N50P by:

Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

Part Details for IXFX64N50P by Littelfuse Inc

Results Overview of IXFX64N50P by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXFX64N50P Information

IXFX64N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXFX64N50P

Part # Distributor Description Stock Price Buy
DISTI # 03AH1017
Newark Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX64N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $11.8200
  • 500 $10.9900
$10.9900 / $11.8200 Buy Now
DISTI # V36:1790_15878506
Arrow Electronics Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 Min Qty: 30 Package Multiple: 30 Lead time: 37 Weeks Date Code: 2417 Americas - 5
  • 30 $11.2560
  • 840 $11.1840
  • 1,500 $11.0730
  • 3,000 $10.9610
  • 6,000 $10.8490
  • 15,000 $10.7380
  • 30,000 $10.6260
$10.6260 / $11.2560 Buy Now
DISTI # 84377344
Verical Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 Min Qty: 5 Package Multiple: 5 Date Code: 2417 Americas - 5
  • 5 $11.2560
  • 840 $11.1840
  • 1,500 $11.0730
  • 3,000 $10.9610
  • 6,000 $10.8490
  • 15,000 $10.7380
  • 30,000 $10.6260
$10.6260 / $11.2560 Buy Now

Part Details for IXFX64N50P

IXFX64N50P CAD Models

IXFX64N50P Part Data Attributes

IXFX64N50P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFX64N50P Littelfuse Inc Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 830 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFX64N50P

This table gives cross-reference parts and alternative options found for IXFX64N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX64N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFX64N50P IXYS Corporation $8.1958 Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXFX64N50P vs IXFX64N50P

IXFX64N50P Related Parts

IXFX64N50P Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the IXFX64N50P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.

  • While the IXFX64N50P is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and thermal management. However, it's essential to consult with Littelfuse's application engineers to ensure the device meets the specific requirements of your high-frequency application.

  • To ensure the reliability of the IXFX64N50P in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range of -40°C to 150°C.

  • Yes, the IXFX64N50P can be paralleled to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients. It's recommended to consult with Littelfuse's application engineers to ensure proper paralleling and to discuss any specific requirements.

  • The recommended gate drive voltage for the IXFX64N50P is between 10V and 15V, with a maximum gate drive voltage of 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.

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