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Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFX64N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1017
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Newark | Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX64N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$10.9900 / $11.8200 | Buy Now |
DISTI #
V36:1790_15878506
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Arrow Electronics | Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 Min Qty: 30 Package Multiple: 30 Lead time: 37 Weeks Date Code: 2417 | Americas - 5 |
|
$10.6260 / $11.2560 | Buy Now |
DISTI #
84377344
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Verical | Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 Min Qty: 5 Package Multiple: 5 Date Code: 2417 | Americas - 5 |
|
$10.6260 / $11.2560 | Buy Now |
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IXFX64N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFX64N50P
Littelfuse Inc
Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 64 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 830 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXFX64N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX64N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IXFX64N50P | IXYS Corporation | $8.1958 | Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXFX64N50P vs IXFX64N50P |
The recommended PCB footprint for the IXFX64N50P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
While the IXFX64N50P is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and thermal management. However, it's essential to consult with Littelfuse's application engineers to ensure the device meets the specific requirements of your high-frequency application.
To ensure the reliability of the IXFX64N50P in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range of -40°C to 150°C.
Yes, the IXFX64N50P can be paralleled to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients. It's recommended to consult with Littelfuse's application engineers to ensure proper paralleling and to discuss any specific requirements.
The recommended gate drive voltage for the IXFX64N50P is between 10V and 15V, with a maximum gate drive voltage of 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.