Part Details for IXFX64N50P by IXYS Corporation
Results Overview of IXFX64N50P by IXYS Corporation
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFX64N50P Information
IXFX64N50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFX64N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFX64N50P-ND
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DigiKey | MOSFET N-CH 500V 64A PLUS247-3 Min Qty: 1 Lead time: 37 Weeks Container: Tube |
1 In Stock |
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$11.8188 / $17.6400 | Buy Now |
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DISTI #
747-IXFX64N50P
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Mouser Electronics | MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds RoHS: Compliant | 569 |
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$11.2900 / $18.0000 | Buy Now |
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Future Electronics | N-Channel 500 V 830 W 150 nC PolarHV HiPerFET Mosfet - PLUS-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 150Tube |
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$11.4100 / $11.9900 | Buy Now |
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DISTI #
87817768
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Verical | Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 Min Qty: 30 Package Multiple: 30 Date Code: 2450 | Americas - 120 |
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$16.0957 / $17.1579 | Buy Now |
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DISTI #
IXFX64N50P
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TTI | MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds Min Qty: 30 Package Multiple: 30 Container: Tube |
Americas - 540 In Stock |
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$13.9700 / $14.5400 | Buy Now |
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Future Electronics | N-Channel 500 V 830 W 150 nC PolarHV HiPerFET Mosfet - PLUS-247 Min Qty: 1 Package Multiple: 1 |
150 null |
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$11.4100 / $11.9900 | Buy Now |
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Future Electronics | N-Channel 500 V 830 W 150 nC PolarHV HiPerFET Mosfet - PLUS-247 Min Qty: 1 Package Multiple: 1 |
643 null |
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$11.0000 / $11.5500 | Buy Now |
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DISTI #
IXFX64N50P
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TME | Transistor: N-MOSFET, unipolar, 500V, 64A, 830W, PLUS247™ Min Qty: 1 | 0 |
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$12.6200 / $17.4400 | RFQ |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 630 |
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$18.4500 / $19.9800 | Buy Now |
Part Details for IXFX64N50P
IXFX64N50P CAD Models
IXFX64N50P Part Data Attributes
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IXFX64N50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX64N50P
IXYS Corporation
Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, PLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFX64N50P Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXFX64N50P is -40°C to 150°C.
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To ensure reliability, follow proper thermal management practices, such as using a heat sink and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.
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The recommended gate drive voltage for the IXFX64N50P is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IXFX64N50P is suitable for switching applications due to its fast switching times and low switching losses. However, ensure that the device is operated within its specified frequency and voltage ratings.
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Use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a zener diode, to protect the device from voltage spikes. Additionally, implement overcurrent protection using a fuse or a current-sensing resistor.