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Part Details for IXFX44N80P by Littelfuse Inc
Results Overview of IXFX44N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IXFX44N80P Information
IXFX44N80P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFX44N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1010
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Newark | Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFX44N80P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$13.6000 / $14.6400 | Buy Now |
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DISTI #
IXFX44N80P-ND
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DigiKey | MOSFET N-CH 800V 44A PLUS247-3 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
296 In Stock |
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$14.1610 / $20.6300 | Buy Now |
Part Details for IXFX44N80P
IXFX44N80P CAD Models
IXFX44N80P Part Data Attributes
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IXFX44N80P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFX44N80P
Littelfuse Inc
Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3400 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFX44N80P
This table gives cross-reference parts and alternative options found for IXFX44N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX44N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFK44N80P | IXYS Corporation | $12.3455 | Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFX44N80P vs IXFK44N80P |
| IXFK44N80P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 44A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFX44N80P vs IXFK44N80P |
IXFX44N80P Frequently Asked Questions (FAQ)
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The thermal resistance of the IXFX44N80P is typically around 0.5°C/W (junction-to-case) and 1.5°C/W (junction-to-ambient) when mounted on a standard PCB.
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Yes, the IXFX44N80P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and derating the device's power handling according to the temperature derating curve provided in the datasheet.
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The recommended gate drive voltage for the IXFX44N80P is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI.
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Yes, it is possible to parallel multiple IXFX44N80P devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.