Datasheets
IXFX32N100Q3 by:

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN

Part Details for IXFX32N100Q3 by IXYS Corporation

Results Overview of IXFX32N100Q3 by IXYS Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

IXFX32N100Q3 Information

IXFX32N100Q3 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXFX32N100Q3

Part # Distributor Description Stock Price Buy
DISTI # 03AH0998
Newark Discmsft Nchhiperfet-Q3 Class To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXFX32N100Q3 RoHS: Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $21.7800
$21.7800 Buy Now
DISTI # IXFX32N100Q3-ND
DigiKey MOSFET N-CH 1000V 32A PLUS247-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube 186
In Stock
  • 1 $32.3700
  • 30 $21.2223
  • 120 $20.7828
$20.7828 / $32.3700 Buy Now
DISTI # 747-IXFX32N100Q3
Mouser Electronics MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A RoHS: Compliant 0
  • 300 $20.7800
$20.7800 Order Now
DISTI # IXFX32N100Q3
TTI MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $27.7100
$27.7100 Buy Now
DISTI # IXFX32N100Q3
TME Transistor: N-MOSFET, X3-Class, unipolar, 1kV, 32A, 1250W, PLUS247™ Min Qty: 1 0
  • 1 $31.1900
  • 3 $27.6000
  • 10 $24.8300
  • 30 $23.0800
$23.0800 / $31.1900 RFQ

Part Details for IXFX32N100Q3

IXFX32N100Q3 CAD Models

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IXFX32N100Q3 Part Data Attributes

IXFX32N100Q3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFX32N100Q3 IXYS Corporation Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 67 pF
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFX32N100Q3

This table gives cross-reference parts and alternative options found for IXFX32N100Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX32N100Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFX32N90P Littelfuse Inc $19.5022 Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXFX32N100Q3 vs IXFX32N90P
IXFX32N100P Littelfuse Inc $19.8416 Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXFX32N100Q3 vs IXFX32N100P
Part Number Manufacturer Composite Price Description Compare
IXFX32N100P IXYS Corporation $10.6563 Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXFX32N100Q3 vs IXFX32N100P
IXFX32N90P IXYS Corporation $11.0682 Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXFX32N100Q3 vs IXFX32N90P
IXFK32N90P IXYS Corporation $21.2087 Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXFX32N100Q3 vs IXFK32N90P
APT34F100B2 Microchip Technology Inc $21.6938 Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB IXFX32N100Q3 vs APT34F100B2
APT29F100L Microsemi Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN IXFX32N100Q3 vs APT29F100L
APT31M100B2 Microsemi Corporation Check for Price Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 IXFX32N100Q3 vs APT31M100B2
IXFK32N100Q3 IXYS Corporation Check for Price Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXFX32N100Q3 vs IXFK32N100Q3

IXFX32N100Q3 Related Parts

IXFX32N100Q3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IXFX32N100Q3 is -40°C to 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias to dissipate heat efficiently.

  • The recommended gate drive voltage for the IXFX32N100Q3 is between 10V and 15V, with a maximum gate current of 5A.

  • To protect the IXFX32N100Q3 from overvoltage and overcurrent, a voltage clamp or a surge protector can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

  • The maximum allowable dv/dt for the IXFX32N100Q3 is 10kV/μs. Exceeding this value may cause the device to fail.

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