Part Details for IXFX32N100Q3 by IXYS Corporation
Results Overview of IXFX32N100Q3 by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
IXFX32N100Q3 Information
IXFX32N100Q3 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFX32N100Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0998
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Newark | Discmsft Nchhiperfet-Q3 Class To-247Ad/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXFX32N100Q3 RoHS: Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$21.7800 | Buy Now |
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DISTI #
IXFX32N100Q3-ND
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DigiKey | MOSFET N-CH 1000V 32A PLUS247-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube |
174 In Stock |
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$20.7828 / $32.3700 | Buy Now |
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DISTI #
747-IXFX32N100Q3
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Mouser Electronics | MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A RoHS: Compliant | 0 |
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$20.7800 | Order Now |
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DISTI #
IXFX32N100Q3
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TTI | MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$27.7100 | Buy Now |
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DISTI #
IXFX32N100Q3
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TME | Transistor: N-MOSFET, X3-Class, unipolar, 1kV, 32A, 1250W, PLUS247™ Min Qty: 1 | 0 |
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$23.0800 / $31.1900 | RFQ |
Part Details for IXFX32N100Q3
IXFX32N100Q3 CAD Models
IXFX32N100Q3 Part Data Attributes
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IXFX32N100Q3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX32N100Q3
IXYS Corporation
Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 67 pF | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFX32N100Q3
This table gives cross-reference parts and alternative options found for IXFX32N100Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX32N100Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX32N90P | Littelfuse Inc | $19.5022 | Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXFX32N100Q3 vs IXFX32N90P |
| IXFX32N100P | Littelfuse Inc | $19.8416 | Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXFX32N100Q3 vs IXFX32N100P |
| IXFX32N100Q3 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFX32N100Q3 vs IXFX32N100Q3 |
IXFX32N100Q3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXFX32N100Q3 is -40°C to 150°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias to dissipate heat efficiently.
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The recommended gate drive voltage for the IXFX32N100Q3 is between 10V and 15V, with a maximum gate current of 5A.
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To protect the IXFX32N100Q3 from overvoltage and overcurrent, a voltage clamp or a surge protector can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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The maximum allowable dv/dt for the IXFX32N100Q3 is 10kV/μs. Exceeding this value may cause the device to fail.