Part Details for IXFT58N20 by Littelfuse Inc
Results Overview of IXFT58N20 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
IXFT58N20 Information
IXFT58N20 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IXFT58N20
IXFT58N20 CAD Models
IXFT58N20 Part Data Attributes
|
|
IXFT58N20
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXFT58N20
Littelfuse Inc
Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 285 pF | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 232 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 115 ns | |
| Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for IXFT58N20
This table gives cross-reference parts and alternative options found for IXFT58N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT58N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFT58N20Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXFT58N20 vs IXFT58N20Q |
| IXFT58N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXFT58N20 vs IXFT58N20 |
| APT20M45SNR | Microsemi Corporation | Check for Price | 58A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 | IXFT58N20 vs APT20M45SNR |
| MTV32N20E | Motorola Mobility LLC | Check for Price | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET | IXFT58N20 vs MTV32N20E |
| MTV32N20E | Rochester Electronics LLC | Check for Price | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN | IXFT58N20 vs MTV32N20E |
| APT20M45SNR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 58A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | IXFT58N20 vs APT20M45SNR |
IXFT58N20 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the IXFT58N20 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
-
While the IXFT58N20 is a fast-switching MOSFET, it's not recommended for high-frequency switching applications above 100 kHz due to its relatively high gate charge and internal gate resistance. For high-frequency applications, consider using a MOSFET with a lower gate charge and internal gate resistance.
-
To ensure proper cooling, make sure to provide a sufficient heat sink with a thermal resistance of less than 1°C/W. Also, ensure good thermal contact between the MOSFET and the heat sink using a thermal interface material. Finally, keep the ambient temperature below 50°C to prevent thermal runaway.
-
Yes, you can parallel multiple IXFT58N20 devices to increase current handling, but it's crucial to ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents. Additionally, make sure to follow proper layout and thermal design guidelines to prevent thermal hotspots.
-
The recommended gate drive voltage for the IXFT58N20 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve switching performance, but it may also increase power consumption and EMI emissions.