Part Details for IXFT36N50P by IXYS Corporation
Results Overview of IXFT36N50P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFT36N50P Information
IXFT36N50P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFT36N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFT36N50P
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Mouser Electronics | MOSFETs 500V 36A RoHS: Compliant | 1674 |
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$6.3800 / $10.7400 | Buy Now |
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DISTI #
IXFT36N50P
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TTI | MOSFETs 500V 36A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$8.4100 / $8.5800 | Buy Now |
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DISTI #
IXFT36N50P
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TME | Transistor: N-MOSFET, unipolar, 500V, 36A, 540W, TO268 Min Qty: 1 | 0 |
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$6.8500 / $9.5900 | RFQ |
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Vyrian | Transistors | 1099 |
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RFQ |
Part Details for IXFT36N50P
IXFT36N50P CAD Models
IXFT36N50P Part Data Attributes
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IXFT36N50P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFT36N50P
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT36N50P
This table gives cross-reference parts and alternative options found for IXFT36N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT36N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT5020BVFRG | Microchip Technology Inc | $10.9576 | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IXFT36N50P vs APT5020BVFRG |
| 2SK3780-01 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXFT36N50P vs 2SK3780-01 |
| 2SK3415LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | IXFT36N50P vs 2SK3415LS |
| 2SK2560 | Shindengen Electronic Manufacturing Co Ltd | Check for Price | Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, FTO-220, 3 PIN | IXFT36N50P vs 2SK2560 |
| 2SK3707 | SANYO Semiconductor Co Ltd | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | IXFT36N50P vs 2SK3707 |
| 2SK2678LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 1.5A I(D), 600V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | IXFT36N50P vs 2SK2678LS |
| 2SK890 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | IXFT36N50P vs 2SK890 |
| 2SK4191LS | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 4.8A I(D), 400V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | IXFT36N50P vs 2SK4191LS |
| 2SK1883 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFT36N50P vs 2SK1883 |
| 2SK1459LS | SANYO Semiconductor Co Ltd | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 900V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | IXFT36N50P vs 2SK1459LS |
IXFT36N50P Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a large copper area for the drain pad, keeping the drain pad as close as possible to the device, and using thermal vias to dissipate heat. A minimum of 2 oz copper thickness is recommended.
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To ensure reliable operation in high-temperature environments, it is essential to follow the recommended derating curves for the device, ensure good thermal management, and consider using a heat sink or thermal interface material to reduce the junction temperature.
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The IXFT36N50P has an internal ESD protection diode, but it is still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
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Yes, the IXFT36N50P is designed to handle high dv/dt switching applications. However, it is essential to follow the recommended gate drive circuitry and layout to minimize ringing and ensure reliable operation.
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The recommended gate drive voltage for the IXFT36N50P is between 10 V and 15 V, with a current capability of up to 2 A. A gate resistor of 10 ohms to 20 ohms is recommended to minimize ringing and ensure reliable operation.