Part Details for IXFT16N120P by Littelfuse Inc
Results Overview of IXFT16N120P by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXFT16N120P Information
IXFT16N120P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFT16N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0926
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Newark | Discmosfetn-Ch Hiperfet-Polar To-268Aa/ Tube |Littelfuse IXFT16N120P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$14.0500 / $15.1200 | Buy Now |
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DISTI #
IXFT16N120P-ND
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DigiKey | MOSFET N-CH 1200V 16A TO268 Min Qty: 1 Lead time: 61 Weeks Container: Tube |
289 In Stock |
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$13.4002 / $20.7800 | Buy Now |
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DISTI #
75578288
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RS | DiscMosfetN-CH HiPerFET-Polar TO-268AA Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$19.0600 / $20.7200 | RFQ |
Part Details for IXFT16N120P
IXFT16N120P CAD Models
IXFT16N120P Part Data Attributes
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IXFT16N120P
Littelfuse Inc
Buy Now
Datasheet
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IXFT16N120P
Littelfuse Inc
Power Field-Effect Transistor, 16A I(D), 1200V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 660 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT16N120P
This table gives cross-reference parts and alternative options found for IXFT16N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT16N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH16N120P | Littelfuse Inc | $13.7756 | Power Field-Effect Transistor, 16A I(D), 1200V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXFT16N120P vs IXFH16N120P |
| IXTK17N120L | IXYS Corporation | $23.2948 | Power Field-Effect Transistor, 17A I(D), 1200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFT16N120P vs IXTK17N120L |
IXFT16N120P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFT16N120P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, the IXFT16N120P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the airflow and ambient temperature in your design.
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The maximum allowed case temperature for the IXFT16N120P is 150°C, but it's recommended to keep the case temperature below 125°C for reliable operation and to prevent thermal runaway.
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Yes, you can parallel multiple IXFT16N120P devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.