Part Details for IXFR90N20 by IXYS Corporation
Results Overview of IXFR90N20 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFR90N20 Information
IXFR90N20 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFR90N20
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFR90N20-ND
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DigiKey | MOSFET N-CH 200V 90A ISOPLUS247 Lead time: 26 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
747-IXFR90N20
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Mouser Electronics | MOSFETs 90 Amps 200V 0.025 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFR90N20
IXFR90N20 CAD Models
IXFR90N20 Part Data Attributes
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IXFR90N20
IXYS Corporation
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Datasheet
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IXFR90N20
IXYS Corporation
Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | ISOPLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFR90N20
This table gives cross-reference parts and alternative options found for IXFR90N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR90N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFR140N20P | IXYS Corporation | $12.7421 | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXFR90N20 vs IXFR140N20P |
| APT20M22JVRU3 | Microchip Technology Inc | $29.9948 | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFR90N20 vs APT20M22JVRU3 |
| APT20M20JLL | Microchip Technology Inc | $31.1021 | Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFR90N20 vs APT20M20JLL |
| APT20M22JVR | Microchip Technology Inc | $32.8498 | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFR90N20 vs APT20M22JVR |
| APT20M20JFLL | Microchip Technology Inc | $44.3904 | Power Field-Effect Transistor, 104A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFR90N20 vs APT20M20JFLL |
| APT20M22JVFR | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 97A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | IXFR90N20 vs APT20M22JVFR |
| IXFR90N20 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXFR90N20 vs IXFR90N20 |