Part Details for IXFR40N90P by IXYS Corporation
Results Overview of IXFR40N90P by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFR40N90P Information
IXFR40N90P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFR40N90P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFR40N90P
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Mouser Electronics | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS: Compliant | 0 |
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$22.2900 | Order Now |
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DISTI #
IXFR40N90P
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TTI | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$24.5200 | Buy Now |
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DISTI #
IXFR40N90P
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TME | Transistor: N-MOSFET, unipolar, 900V, 21A, 300W, ISOPLUS247™ Min Qty: 1 | 0 |
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$21.8500 / $30.5700 | RFQ |
Part Details for IXFR40N90P
IXFR40N90P CAD Models
IXFR40N90P Part Data Attributes
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IXFR40N90P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFR40N90P
IXYS Corporation
Power Field-Effect Transistor, 21A I(D), 900V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, ISOPLUS247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFR40N90P Frequently Asked Questions (FAQ)
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The IXFR40N90P is a power MOSFET, and as such, it does not have a specific maximum operating frequency. However, it is suitable for high-frequency switching applications up to several hundred kHz.
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To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material, and ensure the heat sink is properly attached to the device. The maximum junction temperature (Tj) is 150°C.
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The recommended gate drive voltage for the IXFR40N90P is between 10V and 15V. This ensures reliable switching and minimizes power losses.
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Yes, the IXFR40N90P can be used in a synchronous rectifier application due to its low RDS(on) and high current capability. However, ensure the device is properly driven and thermally managed to prevent overheating.
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The maximum allowable drain-source voltage (Vds) for the IXFR40N90P is 900V. Exceeding this voltage may result in device damage or failure.