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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFP34N65X2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH0821
|
Newark | Discmsft Nchultrajnctx2Class To-220Ab/Fp/ Tube |Littelfuse IXFP34N65X2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$3.7700 / $5.0400 | Buy Now |
DISTI #
IXFP34N65X2-ND
|
DigiKey | MOSFET N-CH 650V 34A TO220AB Min Qty: 1 Lead time: 29 Weeks Container: Tube |
940 In Stock |
|
$3.5362 / $7.2200 | Buy Now |
DISTI #
V36:1790_15878728
|
Arrow Electronics | Trans MOSFET N-CH 650V 34A 3-Pin(3+Tab) TO-220AB Min Qty: 50 Package Multiple: 50 Lead time: 29 Weeks Date Code: 2335 | Americas - 4000 |
|
$3.4530 / $4.1720 | Buy Now |
DISTI #
75578175
|
RS | DiscMSFT NChUltraJnctX2Class TO-220AB/FP Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$5.0300 / $5.4700 | RFQ |
DISTI #
87835280
|
Verical | Trans MOSFET N-CH 650V 34A 3-Pin(3+Tab) TO-220AB Min Qty: 50 Package Multiple: 50 Date Code: 2335 | Americas - 4000 |
|
$3.4530 / $4.0840 | Buy Now |
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IXFP34N65X2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFP34N65X2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 540 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for the IXFP34N65X2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. The maximum junction temperature (Tj) should not exceed 150°C.
The IXFP34N65X2 can withstand voltage spikes up to 1.5 times the maximum rated voltage (650V) for a duration of less than 10ms, but it's recommended to use a TVS diode or other protection circuitry to prevent damage from voltage transients.
Yes, the IXFP34N65X2 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of Vgs(th) and Rds(on) to prevent uneven current sharing and potential damage.
The recommended gate drive voltage for the IXFP34N65X2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.