-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IXFN82N60P by Littelfuse Inc
Results Overview of IXFN82N60P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFN82N60P Information
IXFN82N60P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFN82N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IXFN82N60P-ND
|
DigiKey | MOSFET N-CH 600V 72A SOT-227B Min Qty: 1 Lead time: 44 Weeks Container: Tube |
287 In Stock |
|
$27.0236 / $39.9500 | Buy Now |
|
DISTI #
75578130
|
RS | DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$38.4600 / $41.8000 | RFQ |
Part Details for IXFN82N60P
IXFN82N60P CAD Models
IXFN82N60P Part Data Attributes
|
|
IXFN82N60P
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXFN82N60P
Littelfuse Inc
Power Field-Effect Transistor, 82A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 82 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.04 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN82N60P
This table gives cross-reference parts and alternative options found for IXFN82N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN82N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFN82N60P | IXYS Corporation | $16.8343 | Power Field-Effect Transistor, 82A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXFN82N60P vs IXFN82N60P |
| APT80M60J | Microchip Technology Inc | $52.9790 | Power Field-Effect Transistor, 80A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IXFN82N60P vs APT80M60J |
IXFN82N60P Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) of the IXFN82N60P is not explicitly stated in the datasheet, but it can be determined by consulting the Littelfuse application note AN1005, which provides guidance on SOA calculation for power MOSFETs.
-
To ensure proper thermal management, follow the thermal design guidelines provided in the datasheet, including the recommended PCB layout and thermal pad connection. Additionally, consider using a heat sink or thermal interface material to reduce the junction-to-case thermal resistance.
-
The recommended gate drive voltage for the IXFN82N60P is typically between 10V to 15V, depending on the specific application requirements. However, it's essential to ensure the gate drive voltage does not exceed the maximum rated gate-source voltage (Vgs) of ±20V.
-
Yes, the IXFN82N60P is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, it's crucial to consider the device's switching losses, parasitic inductances, and layout-related issues that may affect high-frequency performance.
-
The internal diode of the IXFN82N60P can be handled by using a suitable snubber circuit or by ensuring the device is operated within its recommended switching frequency and voltage ranges. Additionally, consider using a diode with a similar reverse recovery time to the internal diode to minimize switching losses.