Part Details for IXFN80N50Q2 by Littelfuse Inc
Results Overview of IXFN80N50Q2 by Littelfuse Inc
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IXFN80N50Q2 Information
IXFN80N50Q2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IXFN80N50Q2
IXFN80N50Q2 CAD Models
IXFN80N50Q2 Part Data Attributes
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IXFN80N50Q2
Littelfuse Inc
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Datasheet
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IXFN80N50Q2
Littelfuse Inc
Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFN80N50Q2 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXFN80N50Q2 is -40°C to 150°C.
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Yes, the IXFN80N50Q2 is designed for high-frequency switching applications up to 100 kHz.
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The typical turn-on time is around 10-20 ns, and the typical turn-off time is around 30-50 ns.
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Yes, the IXFN80N50Q2 can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and thermally coupled to avoid uneven current sharing.
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The recommended gate drive voltage for the IXFN80N50Q2 is 10-15 V, but it can operate with a minimum of 5 V.