Part Details for IXFN60N80P by Littelfuse Inc
Results Overview of IXFN60N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
IXFN60N80P Information
IXFN60N80P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFN60N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN60N80P-ND
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DigiKey | MOSFET N-CH 800V 53A SOT-227B Min Qty: 1 Lead time: 44 Weeks Container: Tube |
861 In Stock |
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$31.3786 / $45.0700 | Buy Now |
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DISTI #
75578117
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RS | DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$44.6500 / $48.5300 | RFQ |
Part Details for IXFN60N80P
IXFN60N80P CAD Models
IXFN60N80P Part Data Attributes
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IXFN60N80P
Littelfuse Inc
Buy Now
Datasheet
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IXFN60N80P
Littelfuse Inc
Power Field-Effect Transistor, 53A I(D), 800V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 53 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFN60N80P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXFN60N80P is a standard TO-220 package with a minimum pad size of 120 mils x 120 mils. It's recommended to follow the PCB layout guidelines provided in the Littelfuse application note AN9313.
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Yes, IXFN60N80P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
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The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 1 kΩ to 10 kΩ. It's recommended to consult the Littelfuse application note AN1025 for more detailed guidance.
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Yes, IXFN60N80P is compatible with lead-free soldering processes, such as SnAgCu (SAC) solder. However, it's essential to follow the recommended soldering profile and temperature guidelines to ensure reliable assembly.
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The maximum allowed case temperature for IXFN60N80P is 150°C. It's essential to ensure that the device operates within the recommended temperature range to prevent thermal runaway and ensure reliable operation.