Part Details for IXFN38N100Q2 by IXYS Corporation
Results Overview of IXFN38N100Q2 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
IXFN38N100Q2 Information
IXFN38N100Q2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFN38N100Q2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN38N100Q2-ND
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DigiKey | MOSFET N-CH 1000V 38A SOT-227 Min Qty: 1 Lead time: 43 Weeks Container: Tube | Temporarily Out of Stock |
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$34.1375 / $48.2600 | Buy Now |
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DISTI #
747-IXFN38N100Q2
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Mouser Electronics | MOSFET Modules 38 Amps 1000V 0.25 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFN38N100Q2
IXFN38N100Q2 CAD Models
IXFN38N100Q2 Part Data Attributes
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IXFN38N100Q2
IXYS Corporation
Buy Now
Datasheet
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IXFN38N100Q2
IXYS Corporation
Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 152 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFN38N100Q2 Frequently Asked Questions (FAQ)
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The maximum junction temperature that IXFN38N100Q2 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure the safe operating area (SOA) of IXFN38N100Q2, you should limit the voltage and current within the specified ratings, and also consider the thermal and power derating factors. Additionally, you should ensure that the device is properly cooled and the thermal interface material is suitable for the application.
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The recommended gate drive voltage for IXFN38N100Q2 is between 10V to 15V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, IXFN38N100Q2 is suitable for high-frequency switching applications up to 100 kHz. However, you should consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
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To handle the ESD sensitivity of IXFN38N100Q2, you should follow proper ESD handling procedures, such as using ESD-safe workstations, wearing ESD-protective clothing, and using ESD-protective packaging. Additionally, you should ensure that the device is properly grounded and connected to a low-impedance path to prevent ESD damage.