Part Details for IXFN230N10 by Littelfuse Inc
Results Overview of IXFN230N10 by Littelfuse Inc
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXFN230N10 Information
IXFN230N10 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IXFN230N10
IXFN230N10 CAD Models
IXFN230N10 Part Data Attributes
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IXFN230N10
Littelfuse Inc
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Datasheet
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IXFN230N10
Littelfuse Inc
Power Field-Effect Transistor, 230A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, 4 PIN
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 230 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2750 pF | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Pulsed Drain Current-Max (IDM) | 920 A | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFN230N10 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IXFN230N10 is -55°C to 150°C.
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Yes, the IXFN230N10 is designed for high-reliability applications and is qualified to aerospace and defense standards.
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The typical turn-on time for the IXFN230N10 is around 10-20 ns, depending on the gate drive voltage and circuit conditions.
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Yes, the IXFN230N10 can be used in parallel to increase current handling, but careful attention must be paid to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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The recommended gate drive voltage for the IXFN230N10 is 10-15 V, with a minimum of 4.5 V to ensure proper turn-on.