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Part Details for IXFK94N50P2 by Littelfuse Inc
Results Overview of IXFK94N50P2 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IXFK94N50P2 Information
IXFK94N50P2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFK94N50P2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0699
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Newark | Discmsft N-Ch Hiperfets-Polar2 To-264(3)/ Tube |Littelfuse IXFK94N50P2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$12.6800 / $13.6500 | Buy Now |
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DISTI #
IXFK94N50P2-ND
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DigiKey | MOSFET N-CH 500V 94A TO264AA Min Qty: 1 Lead time: 37 Weeks Container: Tube | Temporarily Out of Stock |
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$15.7780 / $18.3900 | Buy Now |
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DISTI #
75578039
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RS | DiscMSFT N-CH HiPerFETs-Polar2 TO-264(3) Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$17.2100 / $18.7100 | RFQ |
Part Details for IXFK94N50P2
IXFK94N50P2 CAD Models
IXFK94N50P2 Part Data Attributes
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IXFK94N50P2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFK94N50P2
Littelfuse Inc
Power Field-Effect Transistor, 94A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 94 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1300 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK94N50P2
This table gives cross-reference parts and alternative options found for IXFK94N50P2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK94N50P2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX94N50P2 | IXYS Corporation | $10.4564 | Power Field-Effect Transistor, 94A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXFK94N50P2 vs IXFX94N50P2 |
| IXFX98N50P3 | IXYS Corporation | $14.7036 | Power Field-Effect Transistor, 98A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXFK94N50P2 vs IXFX98N50P3 |
| IXFX98N50P3 | Littelfuse Inc | $20.4626 | Power Field-Effect Transistor, | IXFK94N50P2 vs IXFX98N50P3 |
| IXFK94N50P2 | IXYS Corporation | $9.0579 | Power Field-Effect Transistor, 94A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN | IXFK94N50P2 vs IXFK94N50P2 |
| IXFK98N50P3 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFK94N50P2 vs IXFK98N50P3 |
IXFK94N50P2 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFK94N50P2 is a standard TO-220 package footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable operation of the IXFK94N50P2 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The maximum allowed voltage transient for the IXFK94N50P2 is 50V for a duration of 10ms, as specified in the datasheet. Exceeding this limit may damage the device.
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Yes, the IXFK94N50P2 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
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The recommended gate drive voltage for the IXFK94N50P2 is between 10V and 15V, with a maximum gate drive current of 1A. Exceeding this limit may damage the device.