Part Details for IXFK64N60Q3 by Littelfuse Inc
Results Overview of IXFK64N60Q3 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXFK64N60Q3 Information
IXFK64N60Q3 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFK64N60Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0689
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Newark | Discmsft Nchhiperfet-Q3 Class To-264(3)/ Tube |Littelfuse IXFK64N60Q3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$25.1300 | Buy Now |
|
DISTI #
IXFK64N60Q3-ND
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DigiKey | MOSFET N-CH 600V 64A TO264AA Min Qty: 1 Lead time: 46 Weeks Container: Tube |
3 In Stock |
|
$23.9714 / $36.2900 | Buy Now |
|
DISTI #
75578030
|
RS | DiscMSFT NChHiPerFET-Q3 Class TO-264(3) Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$34.1100 / $37.0800 | RFQ |
Part Details for IXFK64N60Q3
IXFK64N60Q3 CAD Models
IXFK64N60Q3 Part Data Attributes
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IXFK64N60Q3
Littelfuse Inc
Buy Now
Datasheet
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IXFK64N60Q3
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 90 pF | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 250 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |