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Part Details for IXFK420N10T by Littelfuse Inc
Results Overview of IXFK420N10T by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFK420N10T Information
IXFK420N10T by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFK420N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AK0429
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Newark | Mosfet, 420A, 100V, 1.67Kw, To-264-3 Rohs Compliant: Yes |Littelfuse IXFK420N10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 234 |
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$12.7200 / $18.3700 | Buy Now |
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DISTI #
IXFK420N10T-ND
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DigiKey | MOSFET N-CH 100V 420A TO264AA Min Qty: 1 Lead time: 25 Weeks Container: Tube |
22 In Stock |
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$11.8740 / $19.2900 | Buy Now |
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DISTI #
E02:0323_07043753
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Arrow Electronics | Trans MOSFET N-CH 100V 420A 3-Pin(3+Tab) TO-264 Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks Date Code: 2426 | Europe - 50 |
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$12.7637 / $16.5602 | Buy Now |
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DISTI #
75578016
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RS | DiscMSFT NChTrenchGate-Gen1 TO-264(3) Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$16.9000 / $18.3700 | RFQ |
Part Details for IXFK420N10T
IXFK420N10T CAD Models
IXFK420N10T Part Data Attributes
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IXFK420N10T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFK420N10T
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 420 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 530 pF | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1670 W | |
| Pulsed Drain Current-Max (IDM) | 1000 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK420N10T
This table gives cross-reference parts and alternative options found for IXFK420N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK420N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX420N10T | IXYS Corporation | $8.9264 | Power Field-Effect Transistor, 420A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXFK420N10T vs IXFX420N10T |
IXFK420N10T Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFK420N10T is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
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While the IXFK420N10T is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for high-power, low-frequency switching applications. For high-frequency switching, consider using a dedicated high-frequency IGBT or MOSFET.
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To ensure proper cooling, follow the manufacturer's recommended thermal management guidelines. This includes using a heat sink with a thermal resistance of ≤ 1°C/W, applying a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K, and ensuring good airflow around the device.
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The maximum allowed voltage transient for the IXFK420N10T is ± 10% of the rated voltage (420V) for a duration of ≤ 100 μs. Exceeding this limit may damage the device or affect its reliability.
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Yes, the IXFK420N10T can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the increased current and voltage stresses.