Part Details for IXFK420N10T by IXYS Corporation
Results Overview of IXFK420N10T by IXYS Corporation
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFK420N10T Information
IXFK420N10T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFK420N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFK420N10T
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Mouser Electronics | MOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A RoHS: Compliant | 401 |
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$11.8700 / $18.9100 | Buy Now |
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DISTI #
87330561
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Verical | Trans MOSFET N-CH 100V 420A 3-Pin(3+Tab) TO-264 Min Qty: 3 Package Multiple: 1 | Americas - 18 |
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$17.1882 / $20.1176 | Buy Now |
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DISTI #
IXFK420N10T
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TTI | MOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$15.8300 / $16.4700 | Buy Now |
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Future Electronics | N-Channel 100 V 420 A 2.6 mO GigaMOS HiPerFET Power Mosfet - TO-264AA Min Qty: 25 Package Multiple: 25 |
100 null |
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$13.5200 / $13.8200 | Buy Now |
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DISTI #
IXFK420N10T
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TME | Transistor: N-MOSFET, GigaMOS™, unipolar, 100V, 420A, 1670W, TO264 Min Qty: 1 | 20 |
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$12.7900 / $17.5900 | Buy Now |
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Chip 1 Exchange | INSTOCK | 50 |
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RFQ | |
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New Advantage Corporation | N-Channel 100 V 420 A 2.6 mO GigaMOS HiPerFET Power Mosfet - TO-264AA RoHS: Compliant Min Qty: 1 Package Multiple: 25 | 50 |
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$21.2600 / $23.0300 | Buy Now |
Part Details for IXFK420N10T
IXFK420N10T CAD Models
IXFK420N10T Part Data Attributes
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IXFK420N10T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFK420N10T
IXYS Corporation
Power Field-Effect Transistor, 420A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-264AA | |
| Package Description | PLASTIC, TO-264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 420 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1670 W | |
| Pulsed Drain Current-Max (IDM) | 1000 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK420N10T
This table gives cross-reference parts and alternative options found for IXFK420N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK420N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFK420N10T | Littelfuse Inc | $12.3627 | Power Field-Effect Transistor, | IXFK420N10T vs IXFK420N10T |
IXFK420N10T Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IXFK420N10T is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
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The recommended gate drive voltage for the IXFK420N10T is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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Yes, the IXFK420N10T can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
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The maximum dv/dt rating of the IXFK420N10T is 10 kV/μs. Exceeding this rating can cause the device to fail or malfunction.