Part Details for IXFK20N120P by IXYS Corporation
Results Overview of IXFK20N120P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFK20N120P Information
IXFK20N120P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFK20N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFK20N120P-ND
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DigiKey | MOSFET N-CH 1200V 20A TO264AA Min Qty: 1 Lead time: 61 Weeks Container: Tube |
3 In Stock |
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$17.7924 / $28.6100 | Buy Now |
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DISTI #
747-IXFK20N120P
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Mouser Electronics | MOSFETs 20 Amps 1200V 1 Rds RoHS: Compliant | 0 |
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$18.4100 | Order Now |
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DISTI #
IXFK20N120P
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TTI | MOSFETs 20 Amps 1200V 1 Rds Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$23.7200 | Buy Now |
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DISTI #
IXFK20N120P
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TME | Transistor: N-MOSFET, unipolar, 1.2kV, 20A, 780W, TO264 Min Qty: 1 | 0 |
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$21.1300 / $29.7500 | RFQ |
Part Details for IXFK20N120P
IXFK20N120P CAD Models
IXFK20N120P Part Data Attributes
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IXFK20N120P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFK20N120P
IXYS Corporation
Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-264AA | |
| Package Description | TO-264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.57 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 780 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFK20N120P
This table gives cross-reference parts and alternative options found for IXFK20N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK20N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFX20N120P | IXYS Corporation | $12.7628 | Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247-3 | IXFK20N120P vs IXFX20N120P |
| APT12060LVR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFK20N120P vs APT12060LVR |
IXFK20N120P Frequently Asked Questions (FAQ)
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The recommended gate resistor value for the IXFK20N120P is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity, but may also increase the turn-on time.
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To ensure proper cooling, the IXFK20N120P should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to provide good airflow, and the device should be mounted using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, the device's thermal pad should be connected to a copper plane on the PCB to help dissipate heat.
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The maximum allowed voltage imbalance between the drain and source terminals of the IXFK20N120P is typically ±10% of the rated voltage. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the voltage difference between the drain and source terminals is within the specified range to maintain the device's reliability and performance.
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Yes, the IXFK20N120P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and synchronized to avoid uneven current sharing. Additionally, the gate drive circuitry should be designed to accommodate the increased gate capacitance and ensure that the devices are turned on and off simultaneously.
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The recommended storage temperature range for the IXFK20N120P is -40°C to 125°C. Storing the device outside this range can cause damage to the internal components or affect its performance and reliability.