Part Details for IXFH86N30T by Littelfuse Inc
Results Overview of IXFH86N30T by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IXFH86N30T Information
IXFH86N30T by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFH86N30T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0618
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Newark | Discmsft Nchtrenchgate-Gen1 To-247Ad/ Tube |Littelfuse IXFH86N30T RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$6.3400 / $6.8300 | Buy Now |
|
DISTI #
IXFH86N30T-ND
|
DigiKey | MOSFET N-CH 300V 86A TO247AD Min Qty: 1 Lead time: 25 Weeks Container: Tube |
306 In Stock |
|
$6.0488 / $12.3300 | Buy Now |
|
DISTI #
75577953
|
RS | DiscMSFT NChTrenchGate-Gen1 TO-247AD Min Qty: 30 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$9.3600 | RFQ |
Part Details for IXFH86N30T
IXFH86N30T CAD Models
IXFH86N30T Part Data Attributes
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IXFH86N30T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH86N30T
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 86 A | |
| Drain-source On Resistance-Max | 0.046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 22 pF | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 860 W | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH86N30T
This table gives cross-reference parts and alternative options found for IXFH86N30T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH86N30T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH86N30T | IXYS Corporation | $4.5699 | Power Field-Effect Transistor, 86A I(D), 300V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXFH86N30T vs IXFH86N30T |
| IXTQ88N28T | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 88A I(D), 280V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXFH86N30T vs IXTQ88N28T |
| IXTQ80N28T | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 80A I(D), 280V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXFH86N30T vs IXTQ80N28T |
IXFH86N30T Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFH86N30T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, the IXFH86N30T is suitable for high-frequency applications up to 100 kHz due to its low switching losses and fast recovery time.
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To ensure reliability in high-temperature environments, it is recommended to derate the device's power rating according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and airflow.
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Yes, the IXFH86N30T can be paralleled for higher current applications, but it is recommended to ensure that the devices are matched for voltage and current ratings, and that the paralleling is done in a way that minimizes current imbalance and thermal mismatch.
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The recommended gate drive voltage for the IXFH86N30T is 10-15V, with a minimum gate drive current of 1A to ensure reliable switching.