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Power Field-Effect Transistor,
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IXFH46N65X2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0593
|
Newark | Discmsft Nchultrajnctn X2Class To-247Ad/ Tube |Littelfuse IXFH46N65X2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$7.4300 / $8.5100 | Buy Now |
DISTI #
IXFH46N65X2-ND
|
DigiKey | MOSFET N-CH 650V 46A TO247 Min Qty: 1 Lead time: 41 Weeks Container: Tube |
300 In Stock |
|
$5.3974 / $7.2900 | Buy Now |
DISTI #
75577923
|
RS | DiscMSFT NChUltraJnctn X2Class TO-247AD Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$10.7900 / $11.7300 | RFQ |
DISTI #
IXFH46N65X2
|
IBS Electronics | N-CHANNEL 650 V 46 A 69 MOHM SMT X2-CLASS HIPERFET POWER MOSFET - TO-247 Min Qty: 300 Package Multiple: 1 | 0 |
|
$8.3850 | Buy Now |
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IXFH46N65X2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH46N65X2
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
JESD-609 Code | e3 | |
Peak Reflow Temperature (Cel) | 260 | |
Terminal Finish | Matte Tin (Sn) | |
Time@Peak Reflow Temperature-Max (s) | 10 |
The recommended PCB footprint for IXFH46N65X2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
Yes, IXFH46N65X2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
The recommended gate drive voltage for IXFH46N65X2 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption.
Yes, you can parallel multiple IXFH46N65X2 devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.