Part Details for IXFH30N50P by Littelfuse Inc
Results Overview of IXFH30N50P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXFH30N50P Information
IXFH30N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFH30N50P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFH30N50P-ND
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DigiKey | MOSFET N-CH 500V 30A TO247AD Min Qty: 1 Lead time: 26 Weeks Container: Tube |
6 In Stock |
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$6.0213 / $10.1500 | Buy Now |
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DISTI #
75577903
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RS | MOSFET DISCRETE TO-247 Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$6.6700 / $7.2500 | RFQ |
Part Details for IXFH30N50P
IXFH30N50P CAD Models
IXFH30N50P Part Data Attributes
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IXFH30N50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH30N50P
Littelfuse Inc
Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH30N50P
This table gives cross-reference parts and alternative options found for IXFH30N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH30N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH30N50P | IXYS Corporation | $2.4134 | Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXFH30N50P vs IXFH30N50P |
IXFH30N50P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXFH30N50P is a pad layout with a minimum size of 2.5mm x 2.5mm, with a 1.5mm x 1.5mm thermal pad in the center. This ensures proper heat dissipation and electrical connection.
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While the IXFH30N50P has a maximum junction temperature rating of 150°C, it's recommended to derate the device's power handling capability at high temperatures. Consult the datasheet's thermal derating curve to determine the maximum power handling at your specific operating temperature.
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To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the thermal stress on the device, such as reflow soldering or hand soldering with a low-temperature solder.
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Littelfuse recommends using a wire bonding method that minimizes the stress on the device's bond wires. A ball-wedge or wedge-wedge bonding method is recommended, with a bond wire diameter of 0.5mm to 1.0mm and a bond force of 10gf to 20gf.
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Yes, the IXFH30N50P is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101, a standard for automotive-grade semiconductor devices. However, it's essential to consult the datasheet and application notes to ensure the device meets your specific application requirements.