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Transistors / Power Field-Effect Transistors / IXFH18N90P
Datasheets
IXFH18N90P by:

Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

Part Details for IXFH18N90P by Littelfuse Inc

Results Overview of IXFH18N90P by Littelfuse Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXFH18N90P Information

IXFH18N90P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXFH18N90P

Part # Distributor Description Stock Price Buy
DISTI # 03AH0549
Newark Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH18N90P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $7.8800
  • 500 $7.3200
$7.3200 / $7.8800 Buy Now
DISTI # IXFH18N90P-ND
DigiKey MOSFET N-CH 900V 18A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube 830
In Stock
Buy Now
DISTI # 75577880
RS DiscMosfetN-CH HiPerFET-Polar TO-247AD Min Qty: 30 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 30 $10.8000
$10.8000 RFQ

Part Details for IXFH18N90P

IXFH18N90P Part Data Attributes

Parametric Data
IXFH18N90P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFH18N90P Littelfuse Inc Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 800 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 53 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 540 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFH18N90P

This table gives cross-reference parts and alternative options found for IXFH18N90P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH18N90P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFT18N90P IXYS Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXFH18N90P vs IXFT18N90P
Part Number Manufacturer Composite Price Description Compare
IXFT18N100Q3 IXYS Corporation $10.0115 Power Field-Effect Transistor, 18A I(D), 1000V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXFH18N90P vs IXFT18N100Q3
APT17F100B Microchip Technology Inc $9.2193 Power Field-Effect Transistor, 17A I(D), 1000V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB IXFH18N90P vs APT17F100B
APT18M100S Microchip Technology Inc $9.7645 Power Field-Effect Transistor, 18A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXFH18N90P vs APT18M100S
IXFT18N90P Littelfuse Inc Check for Price Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXFH18N90P vs IXFT18N90P
IXFH18N100Q3 Littelfuse Inc Check for Price Power Field-Effect Transistor, IXFH18N90P vs IXFH18N100Q3
IXFV18N90PS IXYS Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXFH18N90P vs IXFV18N90PS
IXFV18N90P IXYS Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXFH18N90P vs IXFV18N90P

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